This effect can be used in blg to create band gaps upto 300 mev 10. Improved voltage gain in mechanically stacked bilayer graphene field effect transistors. Pdf modeling of bilayer graphene based field effect. C the same band structure for a finite gate voltage v g and zero bias v b. It is found that oxidized ti contacts on mos 2 form rectifying junctions with. Current saturation and voltage gain in bilayer graphene field. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. Bilayer graphene quantum tunneling transistors are. Compact model for fieldeffect transistors in the last 20 years, and b compact model for graphene fet. Matter 25 105303 view the article online for updates and enhancements. For the bilayer graphene fets, the model considering dos of bilayer graphene is used as eq. In presentday technology, a bilayer graphene field effect transistor blgnrfet is known as a suitable alternative for continuing the scaling trend of transistor dimensions.
Bilayer graphene quantum tunneling transistors are ultralow power and could achieve 100 gigahertz operations. Fieldeffect tunneling transistor based on vertical. Improving the modeling of blg field effect transistor fet devices, based on the quantum. Research article classic and quantum capacitances in bernal bilayer and trilayer graphene field effect transistor hatefsadeghi, 1 danielt. The bisfet includes a first and second conduction layers separated by a tunnel dielectric. Spinorbitdriven band inversion in bilayer graphene by. A polymer electrolyte gate was employed on top to ultilise the enhanced carrier mobility within the top layer. Enhanced intrinsic voltage gain in artificially stacked.
Jul 30, 2014 graphene is an attentiongrabbing material in electronics, physics, chemistry, and even biology because of its unique properties such as high surfaceareatovolume ratio. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolytegated field. In 2014, researchers at university of california, santa barbara led by kaustav banerjee in collaboration with p. Largesignal model of the bilayer graphene fieldeffect transistor targeting radiofrequency applications. Towards singlegate field effect transistor utilizing dual. Feenstra,gonggu,anddebdeepjena abstractin this paper, an analytical model for calculating the channel potential and currentvoltage characteristics in a symmetrictunneling. Current saturation and voltage gain in bilayer graphene. Modeling and simulation of bilayer graphene nanoribbon field effect transistor seyed mahdi mousavi a thesis submitted in fulfillment of the requirements for the award of the degree of master of engineering electrical faculty of electrical engineering universiti teknologi malaysia october 2012. Compact model for dual gate graphene fieldeffect transistor.
Graphene is especially promising for devices working at frequencies in the 100 ghz range. The corresponding device and equivalent capacitive circuit of. Fieldeffect tunneling transistor based on vertical graphene. Largesignal model of the bilayer graphene fieldeffect. Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. Optical properties of terahertzinfrared photodetector. Another interesting effect observed only in bilayer graphene blg is the ability to tailor a tunable band gap in it by applying a transverse electric field across its two layers it is the only material to show this effect 10. Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric. This model extends prior iterative models due to meric et al. Graphene field effect transistor linkedin slideshare. Pdf device model for graphene bilayer fieldeffect transistor. A semianalytical model of bilayergraphene fieldeffect transistor martina cheli, gianluca fiori, and giuseppe iannaccone, member, ieee abstractbilayer graphene has the very interesting property of an energy gap tunable with the vertical electric. The inset in d shows an optical microscope image of the graphene transistor.
Lai, 1 jeanmichel redoute, 2 and aladin zayegh 1 1 the teps research group, college of engineering and science, footscray park campus, victoria university, melbourne, vic 3011, australia. Us8188460b2 bilayer pseudospin fieldeffect transistor. Optical properties of terahertzinfrared photodetector based. Asymmetric schottky contacts in bilayer mos2 field effect. Ali dinarvand, vahid ahmadi, and ghafar darvish, optical properties of terahertzinfrared photodetector based on bilayer graphene nanoribbons with fieldeffect transistor structure, j. A surface potentialbased model for dual gate bilayer. Introduction twodimensional materials have been shown to be good candidates for future low power electronics 14.
Jun 18, 2015 the bilayer graphene tunneling field effect transistor of claim 3, further comprising a second top gate electrode capacitively coupled to the top surface of the bilayer graphene and spaced apart along the top surface from the first top gate electrode, wherein the bottom gate electrode fully overlaps the first top gate electrode and the second. Jun 11, 2009 using a dualgate bilayer graphene field effect transistor fet 2 and infrared microspectroscopy 3,4,5, we demonstrate a gatecontrolled, continuously tunable bandgap of up to 250 mev. Spicecompatible compact model for graphene fieldeffect. This 2d band is broader in bilayer graphene and graphite, since it consists of. A disorder induced field effect transistor in bilayer and trilayer graphene to cite this article. Jimnez, explicit drain current, charge and capacitance model of graphene fieldeffect transistors, ieee trans. Lowenergy band structure, as well as the formation of a gap when a transverse electric field is applied, have been discussed.
First, the model is given as a closedform expression that is more computationally ef. A semianalytical model of bilayer graphene field effect transistor. We report a bipolar field effect transistor that exploits the low density of states in graphene and its oneatomiclayer thickness. Giant intrinsic carrier mobilities in graphene and its bilayer, physical. Keywordsbilayer graphene, field effect transistor, dynamic bandgap, strain i. One unique feature of bilayer graphene is the ability to open a tunable energy band gap by engineering a potential difference between the two layers as is shown in fig. In a nutshell, electrolytegated graphene fieldeffect transistor structure was used after chemical vapor deposition cvd as the electrical transduction stage because of its high electrical conductivity, optical transparency, and large. The gblpt under consideration has the structure of a fieldeffect transistor with a. For the bilayer graphene fets, the model considering. Compact model for dual gate graphene field effect transistor 83 a cross sectional view of the dual gate graphene fet has been considered in fig.
Second, it is valid for devices based upon either monolayer graphene or bilayer graphene. Feenstra,gonggu,anddebdeepjena abstractin this paper, an analytical model for calculating the channel potential and currentvoltage characteristics in a. This paper proposes an electrically embedded sourceside gate blgnrfet eesgblgnrfet in which an appropriate gate engineering takes into account near the source extension. A disorder induced field effect transistor in bilayer and. Direct observation of a widely tunable bandgap in bilayer.
Research article classic and quantum capacitances in bernal. In this work, we have developed them for a dualgated bilayer graphene field effect transistor. A driftdiffusion mechanism for the carrier transport has been considered coupled with an appropriate field effect model taking into account the electronic properties of the bilayer graphene. We propose an analytical model for a bilayergraphene fieldeffect transistor. A rectangular strip consisting of bilayer graphene is used as the device channel which is connected to drain and source contact pads. Using a dualgate bilayer graphene fieldeffect transistor fet 2 and infrared microspectroscopy 3,4,5, we demonstrate a gatecontrolled, continuously tunable bandgap of. New rapid synthesis developed for bilayer graphene and.
Gap state analysis in electricfieldinduced band gap for. A semianalytical model of bilayergraphene fieldeffect. Bilayer graphene nanoribbon fieldeffect transistor with. Jun 10, 2009 on the left, a microscope image looking down through the bilayer graphene field effect transistor. Effect of electric field and magnetic field on spin transport in bilayer graphene armchair nanoribbons. Pdf field effect device fed manufactured from monolayer graphene are. The origin of the low current onoff ratio at room temperature in dualgated bilayer graphene fieldeffect transistors is considered to be the variable range hopping in. We propose an analytical model for a bilayergraphene fieldeffect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Unfortunately, the graphene fieldeffect transistors fets cannot be turned. Fabrication and characterization of graphene field effect diva. The study is extended from bilayer graphene to multilayer graphene graphite while addressing a possibility of fabricating a field effect transistor on such a material. In presentday technology, a bilayer graphene fieldeffect transistor blgnrfet is known as a suitable alternative for continuing the scaling trend of transistor dimensions. A large scale integration approach by arul vigneswar ravichandran, be thesis presented to the faculty of the university of texas at dallas in partial fulfillment of the requirements for the degree of master of science in materials science and engineering the university of texas at dallas december 2016. The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and.
Classic and quantum capacitances in bernal bilayer and. Pdf a semianalytical model of bilayergraphene field. Pdf towards graphene field effect transistors researchgate. Second, it is valid for devices based upon either monolayer graphene or. In this regard, graphene has attracted great interest due to its. On the left, a microscope image looking down through the bilayergraphene fieldeffect transistor. Graphene fieldeffect transistor applicationelectric band structure of graphene in transistor structure extracted from quantum capacitance volume 32 issue 1 kosuke nagashio. A semianalytical model of bilayergraphene fieldeffect transistor. Graphene is a wonder material with ultrafast conductivity due to its zero bandgap structure with outstanding electronic properties. Cvd graphene transportqhe ramanoptical stmafmspm thermal deviceapplications number refers to paper id in full publication list chemical vapor deposited cvd graphene 120 rui he, tingfung chung, conor delaney, courtney keiser, luis a. Graphene fieldeffect transistor applicationelectric band. We propose an analytical model for a bilayergraphene.
A graphene bilayer phototransistor gblpt is proposed and analyzed. Feb 24, 2012 an obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the off state. Graphene field effect transistor applicationelectric band structure of graphene in transistor structure extracted from quantum capacitance volume 32 issue 1 kosuke nagashio. Quantum capacitance of electrolytegated bilayer graphene fieldeffect transistors is investigated in this paper. A proposed symmetric graphene tunneling fieldeffect. High onoff ratios in bilayer graphene field effect. Classic and quantum capacitances in bernal bilayer and trilayer graphene field effect transistor hatef sadeghi, 1 daniel t. The equivalent capacitive network of gfet has been improved considering the quantum capacitance effect for each layer and interlayer capacitances. Conductance modulation of charged lipid bilayer using electrolytegated graphenefield effect transistor. Layout of the proposed graphene bilayer tfet with electrically defined. We propose an analytical model for a bilayer graphene field effect transistor. Jul 30, 2014 conductance modulation of charged lipid bilayer using electrolytegated graphene field effect transistor mohammad javad kiani, 1, 2 fauzan khairi che harun, 1 mohammad taghi ahmadi, 3 meisam rahmani, 1 mahdi saeidmanesh, 1 and moslem zare 4, 5. Graphene is an attentiongrabbing material in electronics, physics, chemistry, and even biology because of its unique properties such as high surfaceareatovolume ratio.
Accepted manuscript influence of interlayer stacking. Volume 14, issue 11, november 2014, pages 15261530. In this work, a surface potential modeling approach has been proposed to model dual gate, bilayer graphene field effect transistor. Related content disorder effect on the integer quantum hall. Quantum capacitance of electrolytegated bilayer graphene field effect transistors is investigated in this paper. The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Compact model for dual gate graphene fieldeffect transistor 83 a cross sectional view of the dual gate graphene fet has been considered in fig. Device model for graphene bilayer fieldeffect transistor. Sispad 2015, september 911, 2015, washington, dc, usa.
A bilayer graphene nanoribbon fieldeffect transistor with. B the corresponding band structure with no gate voltage applied. A bi layer pseudospin fieldeffect transistor bisfet is disclosed. The invention also includes the first demonstration of a bilayer graphene doublegate fieldeffect transistor fet, showing record onoff transistor switching ratio and carrier mobility that. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. The unique structure and electronic properties of bilayer graphene nanoribbon blg such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Pdf a semianalytical model of bilayergraphene fieldeffect. A new physicsbased compact model for bilayer graphene field effect transistors j. Also, the ability of graphene based materials to continuously tune charge carriers from holes to electrons makes them promising for biological applications, especially in lipid bilayer based sensors.
A bilayer graphene tunnelling field effect transistor is provided comprising a bilayer graphene layer, and at least a top gate electrode and a bottom gate electrode, wherein the at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon. Ajayan at rice university, demonstrated the first bilayer graphene doublegate field effect transistor exhibiting record onoff switching ratio and carrier mobilities. Oct 29, 2015 the origin of the low current onoff ratio at room temperature in dualgated bilayer graphene field effect transistors is considered to be the variable range hopping in gap states. The bisfet transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer.
High onoff ratios in bilayer graphene field effect transistors realized by surface dopants. The latest research on bilayer graphene is still in a theoretical and analytical phase, so we present an analytical modeling of a bilayer graphene based field effect transistor blgfet for. Capacitance variation of electrolytegated bilayer graphene. To explain the rectifying output characteristics of the transistors, a model is. The distance between the two outer electrodes is 10 m. Also, the ability of graphenebased materials to continuously tune charge carriers from holes to electrons makes them promising for biological applications, especially in lipid bilayerbased sensors.
A semianalytical model of bilayergraphene field effect transistor. A driftdiffusion mechanism for the carrier transport has been considered coupled with an appropriate fieldeffect model taking into account the electronic properties of the bilayer graphene. Conductance modulation of charged lipid bilayer using. Pdf we present an analytical device model for a graphene bilayer fieldeffect transistor gblfet with a graphene bilayer as a channel, and with back. In this paper, a novel structure for a dualgated bilayer graphene nanoribbon fieldeffect transistor blgnrfet is suggested, which merges the advantages of high and low dielectric constants. Lai, 1 jeanmichelredoute, 2 andaladinzayegh 1 e teps research group, college of engineering and science, footscray park campus, victoria university, melbourne, vic, australia. Related content disorder effect on the integer quantum hall effect in trilayer graphene h y tian, r ma, k s chan et al.
Lai, 1 jeanmichelredoute, 2 andaladinzayegh 1 e teps research group, college of engineering and science, footscray park campus, victoria university, melbourne, vic. Monolayer graphene based transistors are suitable for analogue electronics as offstate is not required in analogue and radio frequency applications. In the most basic version of the fet, only one graphene electrode gr b is essential, and the outside electrode can be made from a metal. In this work, we have developed them for a dualgated bilayer graphene fieldeffect transistor. Jiang key laboratory of automobile materials jilin university, ministry of education, and school of materials science and engineering, jilin. Modeling and simulation of bilayer graphene nanoribbon field effect transistor seyed mahdi mousavi a thesis submitted in fulfillment of the requirements for the award of the degree of master of engineering electrical faculty of electrical.
1598 685 1193 781 605 625 1468 1176 1345 1 984 405 247 115 1463 1134 402 1177 666 1220 977 135 636 1339 1287 681 352 1244 115 1474 1577 61 198 362 1057 441 315 374 942 523